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Heraeus Sinterable Temperature Sensor

The design allows a potential free positioning direct to the heat source/die. The topside metallization is developed for Al-thick wire bonding and the backside is designed for silver sinter processes with and without pressure. Both sides are electrically isolated from each other and therefore no additional structuring of the substrate is needed for direct sintering

Applications

  • Power Electronics

Features

  • Temperature coefficient (TC): 3850 ppm/K
  • Temperature range from -50 °C over +200 °C
  • Available in platinum
  • RoHS compliant
Sinterable SMD Table